Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
région de charge spatiale d'une jonction p-n — pn sandūros erdvinio krūvio sritis statusas T sritis radioelektronika atitikmenys: angl. space charge region of a p n junction vok. Raumladungszone eines p n Übergangs, f rus. зона пространственного заряда p n перехода, f pranc. région de charge… … Radioelektronikos terminų žodynas
p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… … Wikipedia
P-n junction — A p n junction is a junction formed by combining P type and N type semiconductors together in very close contact. The term junction refers to the region where the two regions of the semiconductor meet. It can be thought of as the border region… … Wikipedia
Depletion region — In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region or the space charge region, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers… … Wikipedia
Charge-coupled device — A specially developed CCD used for ultraviolet imaging in a wire bonded package. A charge coupled device (CCD) is a device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated, for… … Wikipedia
Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP … Wikipedia
Raumladungszone eines p-n-Übergangs — pn sandūros erdvinio krūvio sritis statusas T sritis radioelektronika atitikmenys: angl. space charge region of a p n junction vok. Raumladungszone eines p n Übergangs, f rus. зона пространственного заряда p n перехода, f pranc. région de charge… … Radioelektronikos terminų žodynas
pn sandūros erdvinio krūvio sritis — statusas T sritis radioelektronika atitikmenys: angl. space charge region of a p n junction vok. Raumladungszone eines p n Übergangs, f rus. зона пространственного заряда p n перехода, f pranc. région de charge spatiale d une jonction p n, f … Radioelektronikos terminų žodynas
зона пространственного заряда p-n-перехода — pn sandūros erdvinio krūvio sritis statusas T sritis radioelektronika atitikmenys: angl. space charge region of a p n junction vok. Raumladungszone eines p n Übergangs, f rus. зона пространственного заряда p n перехода, f pranc. région de charge… … Radioelektronikos terminų žodynas
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed … Wikipedia
